Schaltungen DC
Indium Phosphide-based Heterojunction Bipolar Transistors with Metal Subcollector Fabricated Using Substrate-transfer Technique | NTT Technical Review
InP-Transistoren mit verbessertem thermischem Widerstand durch integrierte Diamant-Wärmesenke | Ferdinand-Braun-Institut
KIT Scientific Publishing
PPT - Ultra High Speed InP Heterojunction Bipolar Transistors PowerPoint Presentation - ID:9246541
High-speed, High-reliability 0.5-μm-emitter InP-based Heterojunction Bipolar Transistors | NTT Technical Review
Nanomaterials | Free Full-Text | Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors
Modeling technology of InP heterojunction bipolar transistor for THz integrated circuit - Zhang - 2020 - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields - Wiley Online Library
New Symbolically Defined Model for InP Heterojunction Bipolar Transistors | 2018-07-15
Peter Ressel - Ohm-Kontakte für die Basis von InP/In0.53Ga0.47As-Hetero-Bipolartransistoren in der Optoelektronik
A review of InP/InAlAs/InGaAs based transistors for high frequency applications - ScienceDirect
High-Speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology
Color online Schematic epitaxial and device structure of an InP /... | Download Scientific Diagram
Device performance and strain effect of sub-5 nm monolayer InP transistors - Journal of Materials Chemistry C (RSC Publishing)
Indium arsenide channel transistors for mm-wave and high-speed applications
Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits
Squeezed States Generation using Cryogenic InP HEMT Transistor Nonlinearity
Physics-based compact modeling and parameter extraction for InP heterojunction … von Tobias Nardmann - Fachbuch - bücher.de
Conduction bands diagram of InP/InGaAs double heterojunction bipolar transistor for different value of V BE
Das Bell System technische Journal . unterzeichnet, um die Vorteile der variablen Transistoreingangsimpedanz zu nutzen.die Eingangsimpedanz eines Transistors in der gemeinsamen Emitter-Verbindung * in Abb. 5 und 6(b) wird der Faktor
A THz InGaAs/InP double heterojunction bipolar transistor with fmax=325 GHz and BVCBO=10.6 V
Ultra-high-speed 300-GHz InP IC Technology for Beyond 5G | NTT Technical Review
Pushing indium phosphide DHBT frequency to 1.2THz
Verbesserte Wärmeabfuhr bei InP-Transistoren – Basis für effizientere und neuartige HF-Leistungsschaltungen | Ferdinand-Braun-Institut
Applied Sciences | Free Full-Text | Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems
Hard X-ray detection in an InP nanowire transistor: (a) schematic of... | Download Scientific Diagram
Metamorphic Transistor Technology for RF Applications
